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| savantic semiconductor product specification silicon npn power transistors 2N5559 description with to-3 package excellent safe operating area applications for industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches applications pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 150 v v ceo collector-emitter voltage open base 120 v v ebo emitter-base voltage open collector 7 v i c collector current 10 a i cm collector current-peak 15 a p c collector power dissipation t c =25 100 w t j junction temperature 150 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.5 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2N5559 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a ;i b =0 120 v v cesat collector-emitter saturation voltage i c =10a; i b =2a 5.0 v v be base-emitter on voltage i c =10a ; v ce =4v 5.7 v i ceo collector cut-off current v ce =140v; i b =0 5.0 ma i cex collector cut-off current v ce =120v; v be(off) =1.5v t c =150 2.0 10 ma i ebo emitter cut-off current v eb =7v; i c =0 2.0 ma h fe dc current gain i c =4a ; v ce =2v 12 60 savantic semiconductor product specification 3 silicon npn power transistors 2N5559 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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